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 BYV25X-600_1 ? NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 12 August 2008 4 of 9 NXP Semiconductors BYV25X-600 Recti?er diode, ultrafast 7. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF = 5 A; Tj = 150 °C; see Figure 2 - 0.97 1.11 V IF = 5 A - 1.12 1.30 V IR reverse current VR = 600 V - 2 50 μA VR = 600 V; Tj = 100 °C - 0.1 0.35 mA Dynamic characteristics Qr recovered charge IF =2AtoVR ≥ 30 V; dIF/dt=20A/μs; seeFigure3 - 4070nC trr reverse recovery time IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/μs; see Figure 3 - 5060ns IRM peak reverse recovery current IF = 10 A to VR ≥ 30 V; dIF/dt=50A/μs; Tj= 100°C; seeFigure3 - 3 5.5 A VFR forward recoveryIF= 10 A; dIF/dt=10A/μs; voltage seeFigure4 - 3.2 - V (1) Tj= 150°C; typical values (2) Tj= 150°C; maximum values (3) Tj=25°C; maximum values Fig 2. Forward current as a function of forward voltage 003aac232 0 0 0.4 0.8 1.2 1.6V F (V) 5 10 15 IF (A) (1) (2) (3) |